?2000 Fairchild Semiconductor International
Rev. A, May 2000
FYPF2006DN
Typical Characteristics
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 3. Typical Junction Capacitance
(per diode)
Figure 5. Forward Current Derating Curve
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
Figure 4. Thermal Impedance Characteristics
(per diode)
Figure 6. Non-Repetive Sureg Current
(per diode)
0.01
0.0 0.5 1.0 1.5 2.0
0.1
1
10
100
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, I
F
[A]
100
0 204060
1000
TJ=25 oC
Junction Capacitance, C
J
[pF]
Reverse Voltage, VR[V]
0
0 20406080100120140160
5
10
15
20
25
DC
Average Forward Current, I
F(AV)
[A]
Case Temperature, TC[oC]
0204060
0.001
0.01
0.1
1
10
100
TJ=150 oC
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Current, I
R
[mA]
Reverse Voltage, VR[V]
100μ 1m 10m 100m 1 10
0.1
1
10
Transient Thermal Impedance [
o
C/W]
Pulse Duration [s]
0
1 10 100
50
100
150
200
250
Max. Forward Surge Current, I
FSM
[A]
Number of Cycles @ 60Hz
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